Abstract
A desire to achieve optimal electron transport from the electron transport layer (ETL) towards the emissive layer (EML) is an important research factor for the realization of high performance quantum dot light-emitting diodes (QD-LEDs). In this paper, we study the effect of a single, double, and electron transport layer sandwiched Poly(4-vinylpyridine) (PVPy here on) on the charge injection balance and on the overall device performance of InP-based red quantum dot light emitting diodes (red QD-LEDs). The results showed general improvement of device characteristic performance metrics such as operational life with incorporation of a PVPy interlayer. The best performance was observed at a lower concentration of PVPy (@ 0.1 mg/mL) in interlayer with continual worsening in performance as PVPy concentration in the interlayer increased in other fabricated devices. The AFM images obtained for the different materials reported improved surface morphology and overall improved surface properties, but decreased overall device performance as PVPy concentration in interlayer was increased. Furthermore, we fabricated two special devices: in the first special device, a single 0.1 mg/mL PVPy sandwiched between two ZnO ETL layers, and in the second special device, two 0.1 mg/mL PVPy interlayers were inter-sandwiched between two ZnO ETL layers. Particular emphasis was placed on monitoring the maximum obtained EQE and the maximum obtained luminance of all the devices. The first special device showed better all-round improved performance than the second special device compared to the reference device (without PVPy) and the device with a single 0.1 mg/mL PVPy interlayer stacked between ZnO ETL and the emissive layer.