Abstract
The demand for synthetic diamonds and research on their use in next-generation semiconductor devices have recently increased. Microwave plasma chemical vapor deposition (MPCVD) is considered one of the most promising techniques for the mass production of large-sized and high-quality single-, micro- and nanocrystalline diamond films. Although the low-pressure resonant cavity MPCVD method can synthesize high-quality diamonds, improvements are needed in terms of the resulting area. In this study, a large-area diamond synthesis method was developed by arranging several point plasma sources capable of processing a small area and scanning a wafer. A unit combination of three plasma sources afforded a diamond film thickness uniformity of ±6.25% at a wafer width of 70 mm with a power of 700 W for each plasma source. Even distribution of the diamond grains in a size range of 0.1-1 μm on the thin-film surface was verified using field-emission scanning electron microscopy. Therefore, the proposed novel diamond synthesis method can be theoretically expanded to achieve large-area films.