Graphene-oxide interface for optoelectronic synapse application

用于光电突触应用的氧化石墨烯界面

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Abstract

Optoelectronic synapses combine the functionalities of a non-volatile memory and photodetection in the same device, paving the path for the realization of artificial retina systems which can capture, pre-process, and identify images on the same platform. Graphene/Ta(2)O(5)/graphene phototransistor exhibits synapse characteristics when visible electromagnetic radiation of wavelength 405 nm illuminates the device. The photocurrent is retained after light withdrawal when positive gate voltage is applied to the device. The device exhibits distinct conductance states, modulated by different parameters of incident light, such as pulse width and number of pulses. The conductance state can be retained for 10(4) s, indicating long term potentiation (LTP), similar to biological synapses. By using optical and electrical pulses, the device shows optical potentiation and electrical LTD repeatably, implying their applicability in neural networks for pattern recognition.

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