Abstract
The development of organic memory devices, regarding factors such as structure construction, principle exploration, and material design, has become a powerful supplement to traditional silicon-based information storage. The in-situ growth of materials on substrate surfaces can achieve closer bonding between materials and electrodes. Bio-inspired by mussel chemistry, polydopamine (PDA) was self-assembled on a flexible substrate as a connecting layer, and 2-bromoiso-butyryl bromide (BiBB) was utilized as an initiator for the polymerization of an iridium complex via surface-initiated atom-transfer radical polymerization (SI-ATRP). A device with the structure of Al/PDA-PPy(3)Ir/ITO was constructed after the deposition of aluminum. The device exhibited a nonvolatile rewritable memory characteristic with a turn-on voltage of -1.0 V and an ON/OFF current ratio of 6.3 × 10(3). In addition, the memory performance of the Al/PDA-PPy(3)Ir/ITO device remained stable at bending states due to the intrinsic flexibility of the active layer, which can be expanded into the establishment of flexible memory devices. Spectroscopy and electrochemical characterization suggested that the resistive memory properties of the device stemmed from charge transfer between PDA and iridium polymer in the active layer (PDA-PPy(3)Ir) under an applied voltage.