Inorganic molecule (O(2), NO) adsorption on nitrogen- and phosphorus-doped MoS(2) monolayer using first principle calculations

利用第一性原理计算研究无机分子(O(2), NO)在氮磷掺杂的MoS(2)单层上的吸附

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Abstract

We performed a systematic study of the adsorption behaviors of O(2) and NO gas molecules on pristine MoS(2), N-doped, and P-doped MoS(2) monolayers via first principle calculations. Our adsorption energy calculations and charge analysis showed that the interactions between the NO and O(2) molecules and P-MoS(2) system are stronger than that of pristine and N-MoS(2). The spin of the absorbed molecule couples differently depending on the type of gas molecule adsorbed on the P- and N-substituted MoS(2) monolayer. Meanwhile, the adsorption of O(2) molecules leaves N- and P-MoS(2) a magnetic semiconductor, whereas the adsorption of an NO molecule turns this system into a nonmagnetic semiconductor, which may provide some helpful information for designing new N- and P-substituted MoS(2)-based nanoelectronic devices. Therefore, P- and N-MoS(2) can be used to distinguish O(2) and NO gases using magnetic properties, and P-MoS(2)-based gas sensors are predicted to be more sensitive to detect NO molecules rather than pristine and N-MoS(2) systems.

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