Abstract
High mobility thin-film transistor (TFT) is crucial for future high resolution and fast response flexible display. Remarkably high performance TFT, made at room temperature on flexible substrate, is achieved with record high field-effect mobility (μ (FE) ) of 345 cm(2)/Vs, small sub-threshold slope (SS) of 103 mV/dec, high on-current/off-current (I (ON) /I (OFF) ) of 7 × 10(6), and a low drain-voltage (V(D)) of 2 V for low power operation. The achieved mobility is the best reported data among flexible electronic devices, which is reached by novel HfLaO passivation material on nano-crystalline zinc-oxide (ZnO) TFT to improve both I (ON) and I (OFF) . From X-ray photoelectron spectroscopy (XPS) analysis, the non-passivated device has high OH-bonding intensity in nano-crystalline ZnO, which damage the crystallinity, create charged scattering centers, and form potential barriers to degrade mobility.