Abstract
In this paper, we systematically investigate the synergistic regulation of ultraviolet and mechanical loading on the electromechanical behavior of a GaN nanowire. The distributions of polarization charge, potential, carriers, and electric field in the GaN nanowire are analytically represented by using a one-dimensional model that combines pyro-phototronic and piezo-phototronic properties, and then, the electrical transmission characteristics are analyzed. The results suggest that, due to the pyro-phototronic effect and ultraviolet photoexcited non-equilibrium carriers, the electrical behavior of a nano-Schottky junction can be modulate by ultraviolet light. This provides a new method for the function improvement and performance regulation of intelligent optoelectronic nano-Schottky devices.