Abstract
A specimen observed with a transmission electron microscope (TEM) was processed by focused ion beam (FIB) from a surface-micromachined polycrystalline silicon MEMS structure. Electron irradiation and in situ observation were performed on a selected grain boundary in the specimen. The grain boundary was observed and located by using lattice-oriented selective TEM photography. An evolution progress of amorphization of small silicon grain within the grain boundary and recrystallization of amorphous silicon were observed. A silicon grain turned into several smaller bar grains within the grain boundary. The mechanism of grain-boundary evolution inducing a change of conductivity of polycrystalline silicon has been revealed. The conductivity of polycrystalline silicon influenced by electron irradiation could be attributed to the change of grain boundary.