Electronic inhomogeneity and phase fluctuation in one-unit-cell FeSe films

单晶胞FeSe薄膜中的电子不均匀性和相位波动

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Abstract

One-unit-cell FeSe films on SrTiO(3) substrates are of great interest owing to significantly enlarged pairing gaps characterized by two coherence peaks at ±10 meV and ±20 meV. In-situ transport measurement is desired to reveal novel properties. Here, we performed in-situ microscale electrical transport and combined scanning tunneling microscopy measurements on continuous one-unit-cell FeSe films with twin boundaries. We observed two spatially coexisting superconducting phases in domains and on boundaries, characterized by distinct superconducting gaps ( Δ1 ~15 meV vs. Δ2 ~10 meV) and pairing temperatures (T(p1)~52.0 K vs. T(p2)~37.3 K), and correspondingly two-step nonlinear V~Iα behavior but a concurrent Berezinskii-Kosterlitz-Thouless (BKT)-like transition occurring at TBKT ~28.7 K. Moreover, the onset transition temperature Tconset ~54 K and zero-resistivity temperature Tczero ~31 K are consistent with T(p1) and TBKT , respectively. Our results indicate the broadened superconducting transition in FeSe/SrTiO(3) is related to intrinsic electronic inhomogeneity due to distinct two-gap features and phase fluctuations of two-dimensional superconductivity.

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