Abstract
In this paper, the photoluminescence (PL) properties and surface morphology of InGaN/GaN multiple quantum well (MQW) structures with the hydrogen (H(2)) heat treatment of InGaN are investigated to elucidate the effect of hydrogen on the structure and surface of the MQWs. The experimental results show that the H(2) heat treatment on the as-grown MQWs may lead to the decomposition of InGaN and the formation of inhomogeneous In clusters. The atomic force microscope (AFM) study indicates that although the surface roughness of the uncapped samples increases after H(2) treatment, the V-defects are suppressed. Moreover, the luminescence efficiency of the MQWs can be effectively improved by growing a GaN cap layer with an appropriate thickness on the top of the MQWs, which can reduce the effects of the H(2) atmosphere and high temperature on the MQWs. In addition, a morphologic transformation from step bunching to shallow steps occurs and a much smoother surface can be obtained when a thicker cap layer is adopted.