Abstract
The induction of surface cleavage along the crystalline structure of a zinc oxide substrate (plane orientation: 0001) by femtosecond laser pulses (wavelength: 1030 nm) has been reported; a scanning electron microscope image of the one-pulse (pulse energy: 6-60 μJ) irradiated surface shows very clear marks from broken hexagons. This cleavage process differs from the general laser-induced melt process observed on the surfaces of narrower-bandgap semiconductors and other metal materials. This phenomenon is discussed using a multi-photon absorption model, and the pulse-energy dependence of the cleavage depth (less than 3 μm) is quantitatively analyzed. Laser-induced cleavage is found not to occur under multi-pulse irradiation; when more than four pulses are irradiated upon the same spot, the general laser-induced melt process becomes dominant. This cleavage-melt shift is considered to be caused by the enhancement of absorption due to the initial pulses, which is supported by our measurement of cathodoluminescence.