Abstract
Semiconductor/Faradaic layer/liquid junctions have been widely used in solar energy conversion and storage devices. However, the charge transfer mechanism of these junctions is still unclear, which leads to inconsistent results and low performance of these devices in previous studies. Herein, by using Fe(2)O(3) and Ni(OH)(2) as models, we precisely control the interface structure between the semiconductor and the Faradaic layer and investigate the charge transfer mechanism in the semiconductor/Faradaic layer/liquid junction. The results suggest that the short circuit severely restricts the performance of the junction for both solar water splitting cells and solar charging supercapacitors. More importantly, we also find that the charge-discharge potential window of a Faradaic material sensitively depends on the energy band positions of a semiconductor, which provides a new way to adjust the potential window of a Faradaic material. These new insights offer guidance to design high-performance devices for solar energy conversion and storage.