Ultra-Wideband High-Efficiency Solar Absorber and Thermal Emitter Based on Semiconductor InAs Microstructures

基于半导体InAs微结构的超宽带高效太阳能吸收器和热辐射器

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Abstract

Since the use of chemical fuels is permanently damaging the environment, the need for new energy sources is urgent for mankind. Given that solar energy is a clean and sustainable energy source, this study investigates and proposes a six-layer composite ultra-wideband high-efficiency solar absorber with an annular microstructure. It achieves this by using a combination of the properties of metamaterials and the quantum confinement effects of semiconductor materials. The substrate is W-Ti-Al(2)O(3), and the microstructure is an annular InAs-square InAs film-Ti film combination. We used Lumerical Solutions' FDTD solution program to simulate the absorber and calculate the model's absorption, field distribution, and thermal radiation efficiency (when it is used as a thermal emitter), and further explored the physical mechanism of the model's ultra-broadband absorption. Our model has an average absorption of 95.80% in the 283-3615 nm band, 95.66% in the 280-4000 nm band, and a weighted average absorption efficiency of 95.78% under AM1.5 illumination. Meanwhile, the reflectance of the model in the 5586-20,000 nm band is all higher than 80%, with an average reflectance of 94.52%, which has a good thermal infrared suppression performance. It is 95.42% under thermal radiation at 1000 K. It has outstanding performance when employed as a thermal emitter as well. Additionally, simulation results show that the absorber has good polarization and incidence angle insensitivity. The model may be applied to photodetection, thermophotovoltaics, bio-detection, imaging, thermal ion emission, and solar water evaporation for water purification.

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