Construction of a Rh-doped SrTiO(3)/g-C(3)N(4) p-n heterojunction for enhanced photoelectrochemical performance

构建Rh掺杂的SrTiO₃/gC₃N₄ pn异质结以增强光电化学性能

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Abstract

Semiconductor photoelectrochemical (PEC) technology, capable of generating hydrogen energy from water and solar energy, has emerged as a promising solution to address environmental and energy challenges. Rhodium-doped strontium titanate (Rh doped SrTiO(3), RST) is regarded as a highly promising photocathode material for PEC systems. Nevertheless, the PEC performance of RST is hindered by inefficient carrier separation and poor charge transfer properties. In this paper, a hybrid RST/g-C(3)N(4) heterojunction sample was prepared by a simple method. The pure RST sample possesses the ability to absorb visible light and exhibit p-type semiconductor characteristics with a negative photocurrent value of -6.2 μA cm(-2), and can be used as a photocathode material in PEC systems. The enhanced PEC performance with larger photocurrent values can be observed in the heterojunction samples. A photocurrent value of -26.5 μA cm(-2) was achieved in the optimized heterojunction, which is 4.3 times higher than the RST sample. This enhanced PEC performance can be attributed to the formation of a p-n junction between RST and g-C(3)N(4) in composite samples. The p-n junction with built-in electric field and good band alignment will facilitate the more efficient separation and transfer of carriers, leading to enhanced PEC performance.

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