Directed self-assembly of viologen-based 2D semiconductors with intrinsic UV-SWIR photoresponse after photo/thermo activation

光/热激活后,基于紫精的二维半导体实现定向自组装,并具有固有的紫外-短波红外光响应。

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Abstract

Extending photoresponse ranges of semiconductors to the entire ultraviolet-visible (UV)-shortwave near-infrared (SWIR) region (ca. 200-3000 nm) is highly desirable to reduce complexity and cost of photodetectors or to promote power conversion efficiency of solar cells. The observed up limit of photoresponse for organic-based semiconductors is about 1800 nm, far from covering the UV-SWIR region. Here we develop a cyanide-bridged layer-directed intercalation approach and obtain a series of two viologen-based 2D semiconductors with multispectral photoresponse. In these compounds, infinitely π-stacked redox-active N-methyl bipyridinium cations with near-planar structures are sandwiched by cyanide-bridged Mn(II)-Fe(III) or Zn(II)-Fe(III) layers. Radical-π interactions among the infinitely π-stacked N-methyl bipyridinium components favor the extension of absorption range. Both semiconductors show light/thermo-induced color change with the formation of stable radicals. They have intrinsic photocurrent response in the range of at least 355-2400 nm, which exceeds all reported values for known single-component organic-based semiconductors.

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