Abstract
Antimony trisulfide (Sb(2)Se(3)), a non-toxic and accessible substance, has possibilities as a material for use in solar cells. The current study numerically analyses Sb(2)Se(3) solar cells through the program Solar Cell Capacitance Simulator (SCAPS). A detailed simulation and analysis of the influence of the Sb(2)Se(3) layer's thickness, defect density, band gap, energy level, and carrier concentration on the devices' performance are carried out. The results indicate that a good device performance is guaranteed with the following values in the Sb(2)Se(3) layer: an 800 optimal thickness for the Sb(2)Se(3) absorber; less than 10(15) cm(-3) for the absorber defect density; a 1.2 eV optimum band gap; a 0.1 eV energy level (above the valence band); and a 10(14) cm(-3) carrier concentration. The highest efficiency of 30% can be attained following optimization of diverse parameters. The simulation outcomes offer beneficial insights and directions for designing and engineering Sb(2)Se(3) solar cells.