Graphitic carbon nitride (g-C(3)N(4))-based photocatalytic materials for hydrogen evolution

用于析氢的石墨氮化碳(gC₃N₄)基光催化材料

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Abstract

The semiconductors, such as TiO(2), CdS, ZnO, BiVO(4), graphene, produce good applications in photocatalytic water splitting for hydrogen production, and great progress have been made in the synthesis and modification of the materials. As a two-dimensional layered structure material, graphitic carbon nitride (g-C(3)N(4)), with the unique properties of high thermostability and chemical inertness, excellent semiconductive ability, affords good potential in photocatalytic hydrogen evolution. However, the related low efficiency of g-C(3)N(4) with fast recombination rate of photogenerated charge carriers, limited visible-light absorption, and low surface area of prepared bulk g-C(3)N(4), has called out the challenge issues to synthesize and modify novel g-C(3)N(4)-block photocatalyst. In this review, we have summarized several strategies to improve the photocatalytic performance of pristine g-C(3)N(4) such as pH, morphology control, doping with metal or non-metal elements, metal deposition, constructing a heterojunction or homojunction, dye-sensitization, and so forth. The performances for photocatalytic hydrogen evolution and possible development of g-C(3)N(4) materials are shared with the researchers interested in the relevant fields hereinto.

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