Abstract
In this work, a sol-gel spin coating method was applied to obtain ZnO and ZnO:Ga thin films on a glass and ITO-coated glass substrate. Their structural, optical, and electrical properties were investigated with respect to their dependence on the different substrates, the number of layers (two and four), and the annealing temperature (300 and 400 °C). X-ray diffraction (XRD) patterns showed a hexagonal structure corresponding to the wurtzite phase for ZnO and ZnO:Ga films. ZnO films, deposited on a glass substrate, reveal greater crystallite sizes compared with ZnO films obtained from an ITO substrate. A Ga dopant worsened film crystallization. X-Ray photoelectron spectroscopy (XPS) proves the presence of Ga in a ZnO structure. ZnO films show lower transparency and haze values up to 44.12 (glass substrate) and 33.73 (ITO substrate) at a wavelength of 550 nm. The significant enhancement of ZnO film transparency is observed with Ga doping (with average transmittance in the visible spectral range above 85%, independent of the substrate used). Sheet resistance values are lower for ZnO:Ga films, and the figure of merit values are better compared with those of undoped ZnO films. Work function is studied for ZnO and ZnO:Ga films, deposited on Si, ITO, and glass substrates.