Abstract
A metal-free photoanode nanojunction architecture, composed of B-doped carbon nitride nanolayer and bulk carbon nitride, was fabricated by a one-step approach. This type of nanojunction (s-BCN) overcomes a few intrinsic drawbacks of carbon nitride film (severe bulk charge recombination and slow charge transfer). The top layer of the nanojunction has a depth of ca. 100 nm and the bottom layer is ca. 900 nm. The nanojunction photoanode results into a 10-fold higher photocurrent than bulk graphitic carbon nitride (G-CN) photoanode, with a record photocurrent density of 103.2 μA cm(-2) at 1.23 V vs. RHE under one sun irradiation and an extremely high incident photon-to-current efficiency (IPCE) of ca. 10 % at 400 nm. Electrochemical impedance spectroscopy, Mott-Schottky plots, and intensity-modulated photocurrent spectroscopy show that such enhancement is mainly due to the mitigated deep trap states, a more than 10 times faster charge transfer rate and nearly three times higher conductivity due to the nanojunction architecture.