Abstract
Quantum dot sensitized solar cell (QDSSC) performance is primarily limited by the recombination of charges at the interfaces of TiO(2)/quantum dot (QD) sensitizer/electrolyte. Hence, blocking or suppressing the charge recombination is an essential requirement to elevate the QDSSC performance to the next level. To retard the charge recombination, herein, we propose the introduction of a SnO(2) nanograss (NG) interlayer on the surface of TiO(2) using the facile chemical bath deposition method. The SnO(2) NG interlayer not only inhibits the interfacial recombination processes in QDSSCs but also enhances the light-harvesting capability in generating more excitons. Hence, the TiO(2)/SnO(2) NG/CdS QDSSCs can achieve the power conversion efficiency of 3.15%, which is superior to that of a TiO(2)/CdS device (2.16%). Electrochemical impedance spectroscopy, open-circuit voltage decay and dark current analyses confirm that the recombination of charges at the photoanode/electrolyte interface is suppressed and the life time is improved by introducing the SnO(2) NG interlayer between the TiO(2) and CdS QD sensitizer.