Abstract
To suppress the aggregation behavior caused by the high surface energy of quantum dots (QDs), ZnCdS QDs were grown in situ on a g-C(3)N(4) support. During the growth process, the QDs tightly adhered to the support surface. The ZnCdS QDs were prepared by low-temperature sulfurization and cation exchange with a zeolitic imidazolate framework precursor under mild conditions. The heterojunction of g-C(3)N(4)/ZnCdS-2 (CN/ZCS-2, with a g-C(3)N(4) to ZIF-8 ratio of 2.0) not only showed excellent optical absorption performance, abundant reactive sites, and a close contact interface but also effectively separated the photogenerated electrons and holes, which greatly improved its photocatalytic hydrogen production performance. Under visible light irradiation (wavelength > 420 nm) without a noble metal cocatalyst, the hydrogen evolution rate of the CN/ZCS-2 heterojunction reached 1467.23 μmol g(-1) h(-1), and the durability and chemical stability were extraordinarily high.