Abstract
Perovskite solar cells (PSCs) are considered the most promising photovoltaic devices to replace silicon-based solar cells because of their low preparation cost and high photoelectric conversion efficiency (PCE). Reducing defects in perovskite films is an effective means to improve the efficiency of PSCs. In this paper, a lead chelator was selected and mixed into hole transport layers (HTLs) to design and prepare mesoporous PSCs with the structure of ITO/PTAA(BCP)/Al(2)O(3)/PVK/PCBM/BCP/Ag, and its modification effect on the buried interface at the bottom of the perovskite layer in the mesoporous structure was explored. The experimental results show that in the presence of mesoporous alumina, the lead chelator can still play a role in modifying the bottom of the perovskite film. The use of lead chelator as passivation material added to the HTL can effectively reduce the residue of dimethyl sulfoxide (DMSO) and decrease the defects at the bottom of the perovskite film, which dramatically improves the device performance. The PCE of the device is increased from 18.03% to 20.78%, which is an increase of 15%. The work in this paper provides an effective method to enhance the performance of PSCs.