Abstract
In recent years, the rapid development of dynamically tunable metasurfaces has provided a new avenue for flexible control of optical properties. This paper introduces a transmission-type electrically tunable metasurface, employing a series of subwavelength-scale silicon (Si) nanoring structures with an intermediate layer of Al(2)O(3)-ITO-Al(2)O(3). This design allows the metasurface to induce strong Mie resonance when transverse electric (TE) waves are normally incident. When a bias voltage is applied, the interaction between light and matter is enhanced due to the formation of an electron accumulation layer at the ITO-Al(2)O(3) interface, thereby altering the resonance characteristics of the metasurface. This design not only avoids the absorption loss of metal nanostructures and has a large modulation depth, but also shows compatibility with complementary metal oxide semiconductor (CMOS) technology.