Abstract
In this data article, the properties of WS(2)/ZnO type-I heterostructure which corresponds to the research article "Vertically trigonal WS(2) layer embedded heterostructure for enhanced ultraviolet-visible photodetector" (Nguyen et al., 2018) are presented by characteristics of WS(2) layer, diode properties, and thickness dependent photoresponses. The device performances under the effect of rapid thermal processing (RTP) is presented. The WS(2) platelets grown by large area sputtering method (Nguyen et al., 2018) was characterized in term of morphology and chemical elements distribution by using transmission electron microscope (TEM), energy dispersive spectroscopy (EDS) and X-Ray photoelectron spectroscopy (XPS). Diode characterization of WS(2)/ZnO like rectifying ratio, ideal factor and barrier height are presented. The variation of photocurrent of ITO/WS(2)/ZnO/FTO/glass photodetector, its dependence on the WS(2) thickness and influence of post- thermal treatment are presented.