Abstract
Perovskite thin films directly impact solar cell properties, making defect reduction crucial in perovskite solar cell research. In our study, we used perovskite quantum dots in the anti-solvent to act as nucleation centers in MAPbI3 thin films. These centers had lower nucleation barriers than homogeneous nucleation, improving perovskite crystallinity, reducing defects, and extending carrier lifetime. Fine-tuning the energy band also enhanced carrier transport. The most effective results were obtained using CsPb(Br(0.5) I(0.5))(3) perovskite quantum dots. The resulting device, ITO/SnO(2)/MAPbI(3) (300 nm)/spiro-OMeTAD (200 nm)/Ag (100 nm), achieved a 12.88% power conversion efficiency, a 16% increase from the standard element. The modified device maintained approximately 95% of its efficiency over 100 h in a 70% humidity environment.