Abstract
The stability of the perovskite/electron transport layer (ETL) interface is critical for perovskite solar cells due to the presence of ultraviolet (UV) light in the solar spectrum. Herein, we have studied the decomposition process and performance evolution of the perovskite layer in contact with different ETLs under strong ultraviolet irradiation. The normally used SnO2 layer has lower photocatalytic activity in comparison with the TiO2 layer, but the perovskite/SnO2 interface is still severely decomposed along with the formation of hole structures. Such UV light-induced decomposition, on the one hand, leads to the decomposition of the perovskite phase into PbI2 and more seriously, the formed hole structure significantly limits the carrier injection at the interface owing to the separation of the perovskite active layer from ETLs. Under the same conditions, the perovskite/PCBM interface is very stable and maintains a highly efficient carrier injection. There is no significant efficiency degradation of the encapsulated PCBM-based devices measured outdoors for about three months.