Abstract
We report a purely mechanical "cold-compression flow" method for fabricating Zn, Sn, and In substrates with tunable crystallographic textures. Using textured Zn as a model system, we investigate Zn electrocrystallization and demonstrate correlated growth of crystalline films with correlation lengths from tens to hundreds of micrometers. At 5 milliamperes per square centimeter (mA/cm(2)), capacities between 20 and 82 milliampere hours per square centimeter (mA·hour/cm(2)) are achieved depending on substrate texture level. At higher currents (40 mA/cm(2)), capacities reach up to 604 mA·hour/cm(2). Rotating disk electrode studies show that dominantly (002) textured Zn substrates exhibit enhanced corrosion resistance and reduced interphase passivation. We introduce an effective Damköhler number (Da*) to concisely describe morphological evolution during electrocrystallization across substrates with different textures. High-texture (002) Zn substrates substantially enhance performance in high-capacity (~20 mA·hour/cm(2)) symmetric Zn||Zn cells and full cells (Zn||δ-MnO(2) and Zn||I(2)), enabling fast-charging and prolonged energy storage in coin and pouch rechargeable Zn battery formats.