Organic Field-Effect Transistors Based on Chemical-Plated Pt/Ag Electrodes

基于化学镀铂/银电极的有机场效应晶体管

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Abstract

In this study, we successfully prepared silver electrodes through a silver mirror reaction. By carefully regulating the amount of ammonia complexing agent in the silver-ammonia solution, we effectively suppressed the decomposition of the plating solution while reducing the surface roughness of silver films from 9.22 nm to 4.42 nm. The electrical conductivity of our solution-processed silver layers was nearly one order of magnitude higher than that of conventional inkjet-printed silver electrodes. When applied as source-drain electrodes in organic field-effect transistors (OFETs), these electrodes enabled devices with an average mobility of 0.13 cm(2)/(V·s) and remarkably low mobility variation of only 8.7%. Furthermore, we modified the silver electrodes through chemical platinum plating, achieving a significant 0.74 eV alteration in work function, which demonstrates the great potential of chemical plating for surface functionalization in solution-processed organic electronic devices.

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