Abstract
In this paper, a series of experiments were carried out to explore the effect of slurry pH on materials removal rate (MRR) and surface quality in lapping of Si(3)N(4) ceramics wafers with fixed abrasive pad (FAP) using different slurries with different pH. Then, the scanning electron microscope was employed to detect the microtopography and abrade smooth of FAP for exploring the effect of slurries pH on self-conditioning of pad. Experimental results demonstrated that the roughness of wafers increase with the increasing of slurry pH value. The surface of wafers is the best when the pH = 1 and the worst When the pH = 13. The MRR decreases firstly and then decreases with the increasing of the pH. The MRR reaches the lowest when slurry pH = 7, and reaches the highest when slurry pH = 13. These results further suggest that the soften layer of SiO(2) could be formed due to the reactions between water and materials on wafer surface, which facilitates increasing material remove rate and improving the surface quality. The hydrogen ion and triethanolamine in slurry could react with the copper in fixed abrasive pad, which also could enhance the materials remove rate and affect the surface quality.