Abstract
In this work, micro Zn-doped Ga(2)O(3) films (GZO) were deposited by one-step mixed atomic layer deposition (ALD) followed by post-thermal engineering. The effects of Zn doping and post-annealing temperature on both structure characteristics and electric properties were investigated in detail. The combination of plasma-enhanced ALD of Ga(2)O(3) and thermal ALD of ZnO can realize the fast growth rate (0.62 nm/supercyc.), high density (4.9 g/cm(3)), and smooth interface (average R(q) = 0.51 nm) of Zn-doped Ga(2)O(3) film. In addition, the thermal engineering of the GZO was achieved by setting the annealing temperature to 400, 600, 800, and 1000 °C, respectively. The GZO film annealed at 800 °C exhibits a typical crystalline structure (Ga(2)O(3): β phase, ZnO: hexagonal wurtzite), a lower roughness (average R(q) = 2.7 nm), and a higher average breakdown field (16.47 MV/cm). Notably, compared with the pure GZO film, the breakdown field annealed at 800 °C increases by 180%. The O(V) content in the GZO after annealing at 800 °C is as low as 34.8%, resulting in a remarkable enhancement of electrical properties. These research findings offer a new perspective on the high-quality ALD-doped materials and application of GZO in high-power electronics and high-sensitive devices.