The impact of processing voltage of wire electric discharge machining on the performance of Mo doped V-VO(0.2) based Archimedean micro-supercapacitors

线切割放电加工电压对钼掺杂V-VO(0.2)基阿基米德微型超级电容器性能的影响

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Abstract

Vanadium oxide-based electrode materials have attracted increasing attention owing to their extraordinary capacitance and prolonged lifespan, excellent conductivity and outstanding electrochemical reversibility. However, the development of vanadium oxide-based integrated electrodes with outstanding capacitive performance is an enduring challenge. This research reports a facile method for structuring 3D Archimedean micro-supercapacitors (AMSCs) composed of Mo doped V-VO(0.2) (Mo@V-VO(0.2)) based integrated electrodes with designable geometric shape, using computer-aided wire electric discharge machining (WEDM). The performance of Mo@V-VO(0.2) based AMSCs manufactured by different processing voltages of 60 V, 80 V and 100 V were evaluated. It was found that 80 V is the optimal processing voltage for manufacturing Mo@V-VO(0.2) based AMSCs with the best electrochemical performance. This device demonstrates superior capacitive behavior even at an ultra-high scan rate of 50, 000 mV s(-1), and achieves a good capacitance retention rate of 94.4% after 2000 cycles. Additionally, the characteristics of electric field distribution were also simulated for optimizing the geometric structure of the microdevices. This WEDM fabrication technique, which is easy, secure, patternable, efficient, economical, eco-friendly, and does not require binders or conductive additives, enables the development of high-capacity 3D pseudocapacitive micro-supercapacitors and demonstrates the great potential for metal oxide synthesis and microdevice manufacturing.

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