Abstract
The quantification of the lowest unoccupied molecular orbital level (LUMO) for molecular semiconductors is of great importance, because it determines the charge transport process and hence the performances of diverse electronic devices. Unfortunately, there is always lack of a convenient technique to determine the intrinsic LUMO. This work provides a reliable electrical spectroscopy by employing an easy-operating hot electron transistor, to make an accurate measurement. By taking advantage of a novel method, named the first derivative-assisted linear fitting method, the determination of the intrinsic LUMO becomes more scientific. Here, four kinds of molecular semiconductors are selected as the research objects and the values can be precisely decided even with a quite small difference in LUMO, which demonstrate the universality and the accuracy of our method. As expected, all the measured values are highly repeatable and it further confirms that we have provided a practical technique for the LUMO detection.