Advancing 2D CMOS electronics with high-performance p-type transistors

利用高性能p型晶体管推进二维CMOS电子技术发展

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Abstract

Two-dimensional (2D) semiconductors have emerged as promising candidates for enabling complementary metal-oxide-semiconductor (CMOS) technology in post-silicon electronics. However, a significant performance gap between 2D p-type and n-type transistors hampers their immediate industrial application. In this Comment, we discuss recent advances in high-performance 2D p-type transistors, outline a roadmap for their potential development, and propose benchmark performance metrics to guide future progress.

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