Stabilizing buried interface by bilateral bond strength equilibrium strategy toward efficient perovskite photovoltaics

通过双边键强度平衡策略稳定埋藏界面以实现高效钙钛矿光伏器件

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Abstract

The NiO(x)/perovskite interface in p-i-n inverted perovskite solar cells (PSCs) suffers from trap-assisted nonradiative recombination, chemical reactions and weak adhesion. The self-assembled molecules are usually designed to address the above issues. However, absonant bilateral bond strength with NiO(x) and perovskite hinders the realization of efficient and stable PSCs. Herein, a bilateral bond strength equilibrium strategy is proposed to stabilize the buried interface in inverted PSCs through functional group and spatial conformation engineering. 1-(benzothiaxole-2-ylthio)succnic acid (BTSA) is adsorbed on the surface of NiO(x) through the S atom, π-ring, and N atom in the benzothiazole, making benzothiazole ring parallel to the NiO(x) surface, which is beneficial for passivating bilateral defects and improving hole transport. This strategy leads to effective interfacial defect passivation, interfacial chemical reaction suppression and ameliorated electrical properties of NiO(x) films, enabling 1.53 eV PSCs and large-area module (764 cm(2)) with a PCE of 26.98% (certified 26.65%) and 21.98%, respectively.

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