Integrated Design of Electrically Configurable Ferroelectric and Redox-Based Memristors for Hardware-Implemented Reservoir Computing

用于硬件实现储层计算的电可配置铁电和氧化还原忆阻器的集成设计

阅读:1

Abstract

Reservoir computing (RC) offers advantages in processing time-series data with reduced training costs and simpler architectures. This study presents a hardware-implemented RC system utilizing multifunctional memristors fabricated using a single process. By leveraging a ferroelectric-based memristor (FM) as a volatile reservoir layer and a redox-based memristor (RM) as a non-volatile readout layer, seamless integration without additional fabrication steps is achieved. The dual-functional memristor structure enables electrical conversion from FM to RM, enhancing system scalability and versatility. Comprehensive electrical measurements, including low-frequency noise analysis and weight update linearity evaluation, validate the memristors' performance. Potentiation and depression processes achieve a linearity factor improvement to ensure precise synaptic weight tuning, with cycle-to-cycle variation <2.3%. Additionally, the ferroelectric-based memristor exhibits a cycle-to-cycle variation of 3.52%, maintaining distinct reservoir states with minimal overlap. Offline training demonstrates a high classification accuracy of 93.3% on the Modified National Institute of Standards and Technology dataset, while online training achieves an accuracy of 88.2% with incremental pulse schemes, surpassing the accuracy of identical pulse schemes (65.1%). These results establish the practical viability of multifunctional memristors for neuromorphic systems, establishing a robust foundation for next-generation computing technologies.

特别声明

1、本页面内容包含部分的内容是基于公开信息的合理引用;引用内容仅为补充信息,不代表本站立场。

2、若认为本页面引用内容涉及侵权,请及时与本站联系,我们将第一时间处理。

3、其他媒体/个人如需使用本页面原创内容,需注明“来源:[生知库]”并获得授权;使用引用内容的,需自行联系原作者获得许可。

4、投稿及合作请联系:info@biocloudy.com。