Abstract
For scaled transistors utilizing transition metal dichalcogenide (TMDC) channels, we demonstrate that the Ni(0.19)Nb(1.16)S(2) is a promising contact material for n-type field-effect transistors (nFETs). This material is derived from the metallic TMDC NbS(2) through Ni incorporation and enables monolayer MoS(2)-channel nFETs with Ni(0.19)Nb(1.16)S(2) source/drain contacts to achieve higher on-state current and superior thermal stability up to 600 °C compared to devices with NbS(2) or Ni contacts. Metallic NbS(2), owing to its high work function, is suitable as a contact material for p-type FETs (pFETs). However, the incorporation of Ni atoms into NbS(2) modifies both its crystal structure and work function, effectively converting its suitability from pFETs to nFETs applications. Therefore, Ni(0.19)Nb(1.16)S(2) represents a promising contact material for MoS(2)-channel nFETs, while NbS(2) remains appropriate for pFETs, thereby advancing CMOS integration process technology for TMDC-based CMOS devices. SUPPLEMENTARY INFORMATION: The online version contains supplementary material available at 10.1038/s41598-026-41610-3.