Abstract
Zinc oxide (ZnO) nanorods, measuring 500 nm in diameter and 100 nm in length, were created in this article using an optimised hydrothermal low temperature technique. Using the newly created floating film transfer method, a large-scale oriented composite thin film of ZnO nanorod dispersion and poly (3-hexyl thiophene) is created. A thin film of the produced nanocomposite was placed to an active area of the p-type organic transistor in order to increase its mobility. The obtained high charge carrier hole mobility µ, of ˃0.08 cm(2)/Vs along the orientation direction is caused by the nanocomposite thin film, as has been established. As per the prior research, the achieved result is approximately two orders higher and represents a more than four-fold boost over the pristine polymer device. The XRD and SEM were utilized to examine the crystalline characteristics of the nanostructure, and the atomic force microscope was employed to investigate the thin film morphology of the nanocomposite.