Abstract
The effect of crystallization process speed on the morphology of solution-processed methyl ammonium lead iodide (MAPbI3) thin films is investigated. Crystallization speed is controlled by varying the number of annealing steps, temperature, and resting time between steps. The resting period allows solvent-controlled growth (SCG) in which crystallization progresses slowly via an intermediate phase-during which solvents slowly evaporate away from the films. SCG results in fewer residues, fewer pinholes, and larger grain sizes. Consequently, thin-film transistors with SCG MAPbI3 exhibit smaller hysteresis in their current-voltage characteristics than those without, demonstrating the benefits of SCG toward hysteresis-free perovskite devices.