Monte Carlo calculated absorbed-dose energy dependence of EBT3 and EBT4 films for 5-200 MeV electrons and 100 keV-15 MeV photons

利用蒙特卡罗方法计算了EBT3和EBT4胶片对5-200 MeV电子和100 keV-15 MeV光子的吸收剂量与能量的关系。

阅读:1

Abstract

PURPOSE: To use Monte Carlo simulations to study the absorbed-dose energy dependence of GAFChromic EBT3 and EBT4 films for 5-200 MeV electron beams and 100 keV-15 MeV photon beams considering two film compositions: a previous EBT3 composition (Bekerat et al.) and the final composition of EBT3/current composition of EBT4 (Palmer et al.). METHODS: A water phantom was simulated with films at 5-50 mm depth in 5 mm intervals. The water phantom was irradiated with flat, monoenergetic 5-200 MeV electron beams and 100 and 150 keV kilovoltage and 1-15 MeV megavoltage photon beams and the dose to the active layer of the films was scored. Simulations were rerun with the films defined as water to compare the absorbed-dose response of film to water, f-1(Q) = / . RESULTS: For electrons, the Bekerat et al. composition had variations in f-1(Q) of up to (1.9  ±  0.1)% from 5 to 200 MeV. Similarly, the Palmer et al. composition had differences in f-1(Q) up to (2.5 ± 0.2)% from 5 to 200 MeV. For photons, f-1(Q) varied up to (2.4 ± 0.3)% and (4.5 ± 0.7)% from 100 keV to 15 MeV for the Bekerat et al. and Palmer et al. compositions, respectively. The depth of films did not appear to significantly affect f-1(Q) for photons at any energy and for electrons at energies  >   50 MeV. However, for 5 and 10 MeV electrons, decreases of up to (10.2 ± 1.1)% in f-1(Q) were seen due to stacked films and increased beam attenuation in films compared to water. CONCLUSIONS: The up to (2.5 ± 0.2)% and (4.5 ± 0.7)% variations in f-1(Q) for electrons and photons, respectively, across the energies considered in this study indicate the importance of calibrating films with the energy intended for measurement. Additionally, this work emphasizes potential issues with stacking films to measure depth dose curves, particularly for electron beams with energies  ≤  10 MeV.

特别声明

1、本页面内容包含部分的内容是基于公开信息的合理引用;引用内容仅为补充信息,不代表本站立场。

2、若认为本页面引用内容涉及侵权,请及时与本站联系,我们将第一时间处理。

3、其他媒体/个人如需使用本页面原创内容,需注明“来源:[生知库]”并获得授权;使用引用内容的,需自行联系原作者获得许可。

4、投稿及合作请联系:info@biocloudy.com。