Abstract
A thin-film strain micro-sensor is a cutting force sensor that can be integrated with tools. Its elastic substrate is an important intermediate to transfer the strain generated by the tools during cutting to the resistance-grid-sensitive layer. In this paper, 1060 aluminum is selected as the elastic substrate material and aluminum oxide thin film is selected as the transition layer between the aluminum substrate and the silicon nitride insulating layer. The Stoney correction formula applicable to the residual stress of the aluminum oxide film is derived, and the residual stress of the aluminum oxide film on the aluminum substrate is obtained. The influence of Sputtering pressure, argon flow and negative substrate bias process parameters on the surface quality and sputtering power of the aluminum oxide thin film is discussed. The relationship model between process parameters, surface roughness, and sputtering rate of thin films is established. The sputtering process parameters for preparing an aluminum oxide thin film are optimized. The micro-surface quality of the aluminum oxide thin film obtained before and after the optimization of the process parameters and the surface quality of Si(3)N(4) thin film sputtered on alumina thin film before and after the optimization are compared. It is verified that the optimized process parameters of aluminum oxide film as a transition layer can improve the adhesion between the insulating-layer silicon nitride film and the aluminum substrate.