Abstract
ZnO film is widely used in the field of health monitoring sensors, which has high requirements for the piezoelectric coefficient and film-to-substrate adhesion of the ZnO film. In this study, ZnO thin films were grown on a GH4169 superalloy steel (GSS) substrate using magnetron sputtering, and the effects of the sputtering power, argon-oxygen ratio, and sputtering pressure on the piezoelectric coefficient and film-to-substrate adhesion were studied. The composition, microstructure, and crystal orientation of ZnO thin films deposited under different process parameters were analyzed using X-ray diffraction (XRD), a scanning electron microscope (SEM), and an energy spectrum analyzer (EDS). The piezoelectric coefficient d(33) was measured using a piezoelectric coefficient measuring instrument. The critical value of adhesion between the film and substrate was measured using the scratch method. The results demonstrated that the ZnO films had the most desirable properties when the sputtering power was 150 W, the argon-oxygen ratio was 25:10, and the sputtering pressure was 0.7 Pa. The XRD results showed that the ZnO film samples had the strongest (002) crystal orientation at 2θ = 34.4°; the SEM photos showed that the film samples were flat and uniform; and the EDS composition analysis results showed that the composition was close to the theoretical value. The maximum d(33) coefficient value was 5.12 pC/N, and the maximum value of film-to-substrate adhesion between the ZnO films and GSS substrate was 4220 mN.