Abstract
We have used spectral two-layer interferometry (STLI) imaging for estimation of the stress distribution profiles (SDPs) in thin film substrates, enabling fast and reliable all-optical methodology for the evaluation of pre-stress topography profiles in silicon wafers deposited with thin films. Specifically, in polycrystalline silicon (PS) and silicon nitride (SN) thin films, we demonstrate a nondestructive, systematic, and robust capability for consistent stress distribution profile (SDP) evaluation relying on STLI. In particular, for PS and SN devices, the SDP estimation is consistent and is compared with complementary characterization of the films.