Abstract
For advanced semiconductor nodes, the demand for high-precision patterning of complex foundry circuits drives the widespread use of Lithography-Etch-Lithography-Etch (LELE)-a key Multiple Patterning Technology (MPT)-in Deep Ultraviolet (DUV) processes. However, the interaction between LELE's two Lithography-Etch (LE) cycles makes it very challenging to build a model for etching contour simulation and hotspot detection. This study presents an Artificial Intelligence (AI)-assisted composite etch model to capture inter-LE interactions, which directly outputs the final post-LELE etch contour, enabling Etch Rule Check (ERC)-based simulation detection of After Etch Inspection (AEI) hotspots. In addition, the etch model proposed in this study can also predict the etch bias of different types of pattern (especially complex two-dimensional (2D) patterns), thereby enabling auto retargeting for After Develop Inspection (ADI) target generation. In the future, the framework of this composite model can be adapted to the Self-Aligned Reverse Patterning (SARP) + Cut process to address more complex MPT challenges.