Abstract
Due to their high carrier mobility, thermal conductivity, and exceptional foldability, transition metal dichalcogenides (TMDs) present promising prospects in the realm of flexible semiconductor devices. Concurrently, tunneling field-effect transistors (TFETs) have garnered significant attention owing to their low energy consumption. This study investigates a TMD van der Waals heterojunction (VdWH) TFET, specifically by fabricating MoS(2) field-effect transistors (FETs), WSe(2) FETs, and MoS(2)/WSe(2) VdWH TFETs. The N-type characteristics of the MoS(2) and P-type characteristics of WSe(2) are established through an analysis of the electrical characteristics of the respective FETs. Finally, we analyze the energy band and electrical characteristics of the MoS(2)/WSe(2) VdWH TFET, which exhibits a drain current switching ratio of 10(5). This study provides valuable insights for the development of novel low-power devices.