Abstract
This study investigates the effects and mechanisms of high-power microwave on GaN HEMTs. By injecting high-power microwave from the gate into the device and employing techniques such as DC characteristics, gate-lag effect analysis, low-frequency noise measurement, and focused ion beam (FIB) cross-sectional inspection, a systematic investigation was conducted on GaN HEMT degradation and failure behaviors under conditions of a low duty cycle and narrow pulse width. Experimental results indicate that under relatively low-power HPM stress, GaN HEMT exhibits only a slight threshold voltage shift and a modest increase in transconductance, attributed to the passivation of donor-like defects near the gate. However, when the injected power exceeds 43 dBm, the electric field beneath the gate triggers avalanche breakdown, forming a leakage path and causing localized heat accumulation, which ultimately leads to permanent device failure. This study reveals the physical failure mechanisms of GaN HEMTs under low-duty-cycle HPM stress and provides important guidance for the reliability design and hardening protection of RF devices.