Abstract
Infrared image sensors are crucial across various industries. However, with technological advancements, the growing scale of infrared image sensors has made the impact of transient dose rate effects increasingly significant. It is necessary to conduct relevant radiation effect studies to provide the theoretical and data basis for future radiation-hardened design. This study explores the response of large-area N-wells in the readout circuit of infrared detectors to transient dose rate effects. The TCAD simulation results indicate that the expansive N-well area in the merged-design pixel units generates significant current pulses when exposed to gamma-ray irradiation. Specifically, at dose rates of 3 × 10(11) rad/s, 5 × 10(11) rad/s, 7 × 10(11) rad/s, and 9 × 10(11) rad/s, the pulse currents measured are 39 nA, 64 nA, 89 nA, and 119 nA, respectively. Due to the spatial constraints of the 55 nm merged design, the close proximity of the GND to the N-well creates a high potential barrier near the N-well, obstructing the path between the GND and the substrate, which results in the pulse current exhibiting a stepped-like characteristic.