Abstract
The development of "portable, low cost and low consumption" gas microsensors is one of the strong needs for embedded portable devices in many fields such as public domain. In this paper, a new approach is presented on making, on the same chip, a network of head-to-tail facing PN junctions in order to miniaturize the sensor network and considerably reduce the required power for heating each cell independently. This paper is about recognizing a device that integrates both sensing and self-heating. This first study aims to evaluate the possibilities of this type of diode network for use as a gas sensor. The first part concerns the description of the technological process that is based on a doped polysilicon wafer in which a thin layer of metal oxide (a gallium-doped zinc oxide in our case) is deposited by RF sputtering. An electrical model will be proposed to explain the operation and advantage of this approach. We will show the two types of tests that have been carried out (static and dynamic) as well as the first encouraging results of these electrical characterizations under variable atmospheres.