Abstract
We proposed the enhancement of the electrical properties of solution-processed indium-tin-oxide (ITO) thin films through microwave irradiation (MWI) and argon (Ar) gas plasma treatment. A cost- and time-effective heat treatment through MWI was applied as a post-deposition annealing (PDA) process to spin-coated ITO thin films. Subsequently, the sheet resistance of MWI ITO thin films was evaluated before and after plasma treatment. The change in the sheet resistance demonstrated that MWI PDA and Ar plasma treatment significantly improved the electrical properties of the ITO thin films. Furthermore, X-ray photoelectron spectroscopy and X-ray diffraction analyses showed that the electrical properties of the ITO thin films were enhanced by the increase in oxygen vacancies due to the ion bombardment effect of high-energy plasma ions during Ar plasma treatment. Changes in the band gap structure of the ITO thin film due to the ion bombardment effect were also analyzed. The combination of MWI PDA and Ar plasma treatment presents new possibilities for improving the high-conductivity sol-gel ITO electrode.