Abstract
We examined how controlling variables in a pre-metallization Ar sputter-etching process for in situ contact-hole cleaning affects the contact-hole profile, etching rate, and substrate damage. By adjusting process parameters, we confirmed that increasing plasma power lowered the DC bias but enhanced the etching rate of SiO(2), while increasing RF power raised both, with RF power having a more pronounced effect. Higher Ar flow rate reduced etching uniformity and slightly lowered the DC bias. There was no significant difference in the amount of etching between the oxide film types, but the nitride/oxide selectivity ratio was about 1:2. Physical damage during Ar sputter-etching was closely linked to DC bias. finally, Finally, etching of the Si and CoSi(2) sublayers was performed on the device contact hole model. At this time, Si losses of up to about 31.7 Å/s occurred, and the etch speed was strongly affected by the DC bias. By optimizing the RF power and plasma power, we achieved a Si/CoSi(2) etch selectivity ratio of about 1:2.