Abstract
This study introduces a novel method that integrates artificial neural networks (ANNs) with the Particle Swarm Optimization (PSO) algorithm to enhance the efficiency and precision of parameter optimization for the small-signal equivalent model of dual-field-plate GaN HEMT devices. We initially train an ANN model to predict the S-parameters of the device, and subsequently utilize the PSO algorithm for parameter optimization. Comparative analysis with the NSGA2 and DE algorithms, based on convergence speed and accuracy, underscores the superiority of the PSO algorithm. Ultimately, this ANN-PSO approach is employed to automatically optimize the internal parameters of a 4 × 250 μm dual-field-plate GaN HEMT equivalent circuit model within the frequency range of 1-18 GHz. The method's effectiveness under varying bias conditions is validated through comparison with traditional physical formula analysis methods. The results demonstrate that the ANN-PSO method significantly enhances the automation and efficiency of parameter optimization while maintaining model accuracy, providing a reference for the optimization of other device models.